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Dual Mask Aligner
(양면 정렬 마이크로패턴 노광장비)

equipment explanation
Model - SUSS MicroTec Lithography GmbH , 2016
- model MASK ALIGNER MA6
Operating time 09:00 ~ 18:00
Location IBS HQ
(C171 Photo-lithography room)
inquiry

1. Equipment name : Dual Mask Aligner (양면 정렬 마이크로패턴 노광장비)

    

2. Manufacture and Model

- SUSS MicroTec Lithography GmbH , 2016

- model MASK ALIGNER MA6

    

3. Purpose : This equipment is used to development for low temperature detectors. It is a semi-automated mask aligner for both side alignment for wafers.

    

4. Specification and performance :

It should guarantee the alignment accuracy of 0.5 um for top-side and 1 um for bottom-side. Flexible beam shaping adjustment has be available by using different illumination filter plates.

1. Wafer/Substrate Size : Silicon wafer and transparent substrate of 3" and above

2. Mask size : 5" × 5", 6" × 6"

3. Exposure optics

- UV light source 350 ~ 450 , UV-Lamp power 350 W

- Light uniformity: 2.0%

4. Exposure System

- For steep wall slopes, high resolution, high aspect ratio structure, thick PR

- Exposure gap : 1~999 / 1 um steps

5. Printing Resolution

- Vacuum contact : 0.7

- Hard / Soft contact : 1.0 /2.0

- Proximity (20 ) : 2.5 ~ 3.0

6. Alignment

- Methods : Top Side Alignment (TSA) microscope

: Bottom Side Alignment (BSA) microscope

- Accuracy: TSA ± 0.5 / BSA ± 1.0

- Alignment gap : 1 ~ 999 / 1 um steps

7. Alignment stage

- Alignment range in X : ±10

- Alignment range in Y : ±5

- Alignment range in θ : ±5°

- Mechanical resolution in X, Y : 0.1

8. Microscope illumination

9. Microscope stage(TSA/BSA)

Top side alignment

- Movement range in X : ± 40

- Movement range in Y : +30 / -50

- Rotation range : ±4°

Bottom side alignment

- Movement range in X : 15 mm to 100 mm

- Movement range in Y : +50 mm / -20 mm

10. Topside microscope (split-field)

- Eyepieces : two 10X

- Objectives : two 5X, two 10X with turret

11. Programming

- Exposure modes : Proximity, Soft contact, Hard contact, Vacuum contact , Soft vacuum contact

- Exposure time : 0 ~ 999.9 sec, 0.1 sec steps

- Resist type : Positive, Negative

- Alignment side : Top side alignment

12. Lamp power supply unit

- Constant intensity mode for 365 , 405 : To compensate intensity lost due to lamp aging

- Constant power Mode

- Digital read out of light intensity and power

13. Lamp adapter

14. Light intensity meter

- For measurement, check and calibration of light uniformity in the exposure area

- Dose measurement functionality

- Measurement for 365 nm and broadband(i-, g-, h-line)

15. Internal UV light sensors

- For lamp power supply

- For light intensity meter (365 nm/405 nm)

16. Wedge Error Compensation System

: Leveling of substrate to mask

17. UV Lamp ( 350 W)

18. Vacuum Pump

19. Vibration isolation damping system

20. Expandable design for following features

- Nano Imprinting Lithography

- Buried layers feature alignment using Infrared light kits

- Mask Protection Technology(MPT) to reduce the frequency of mask cleaning

    

5. Location and Picture :

- IBS head quarter, C171 Photo-lithography room