791 |
SnS2 based 2D dilute magnetic semiconductors with high Curie temperature Houcine Bouzid, Kirandeep Singh, Youngjo Jin, Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29)] Poster |
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790 |
Role of alkali metal promoters in monolayer transition metal dichalcogenides growth Hyun Kim, Gang Hee Han, and Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29)] Poster |
789 |
NbSe2-WSe2 lateral heterostructure grown by CVD Sehwan Park, Seokjoon Yoon, Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29-)] Poster |
788 |
Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant Seok Joon Yun, Dinh Loc Duong, and Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29)] Poster |
787 |
Tunable Negative Differential Resistance in van der Waals Heterostructures by Tailoring Interface Quoc An Vu, Sidi Fan, Woo Jong Yu, Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29)] Poster |
786 |
Raman Modes of Graphene activated by Localized Surface Plasmons Un Jeong Kim, Jun Suk Kim, Noejung Park, Sang Hyub Lee, Ukjae lee, Yeonsang Park, Jinbong Seok, Hyungbin Son, and Young Hee Lee [A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29)] Poster |
785 |
Coulomb drag behavior in graphene/MoS2 heterointerface Youngjo Jin, Min-Kyu Joo, Byoung Hee Moon, Hyun Kim, Sang Hyub Lee, Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 29)] Poster |
784 |
Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors Sidi Fan, Young Hee Lee [9th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics, Kyoto University, Kyoto, Japan (2018-October 30)] Poster |